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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 3.0 300 MAX. 1500 800 5 8 45 3.0 450 UNIT V V A A W V A ns
Ths 25 C IC = 3 A; IB = 0.75 A f = 16 kHz ICsat = 3.0 A;f = 16 kHz
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
123
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 5 8 3 5 4 45 150 150 UNIT V V A A A A A W C C
Ths 25 C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 32 MAX. 2.8 UNIT K/W K/W
1 Turn-off current.
July 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 3.0 A; IB = 0.75 A IC = 3.0 A; IB = 0.75 A IC = 0.5 A; VCE = 5 V IC = 3 A; VCE = 5 V
MIN. 7.5 800 0.8 4.2
TYP. 13.5 0.89 10 5.5
MAX. 1.0 2.0 3.0 0.98 7.3
UNIT mA mA V V V V
Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (16kHz line deflection circuit) Turn-off storage time Turn-off fall time CONDITIONS ICsat = 3.0 A; IB1 = 0.6 A; (IB2 = -1.5 A) 3.7 300 4.6 450 s ns TYP. MAX. UNIT
ts tf
IC / mA
+ 50v 100-200R
250
Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R
200
100
0 VCE / V
min VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
July 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AX
TRANSISTOR IC DIODE
ICsat
100
hFE
Ths = 25 C Ths = 85 C
t
VCE = 1 V
IB
IB1 t 20us 26us 64us IB2
10
VCE
1 0.01
t
0.1
1
IC / A 10
Fig.3. Switching times waveforms (16 kHz).
Fig.6. High and low DC current gain.
ICsat 90 % IC
100
hFE
Ths = 25 C Ths = 85 C
VCE = 5 V
10 % tf ts IB IB1
t
10
t
1 0.01
- IB2
0.1
1
IC / A
10
Fig.4. Switching times definitions.
Fig.7. High and low DC current gain.
+ 150 v nominal adjust for ICsat
1
VCESAT / V
Ths = 25 C Ths = 85 C
0.8
Lc
0.6
0.4
IBend
LB
T.U.T. Cfb
0.2
-VBB
0 0.1 1 IC / A 10
Fig.5. Switching times test circuit.
Fig.8. Typical collector-emitter saturation voltage.
July 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AX
VBESAT / V 1.2
Ths = 25 C Ths = 85 C
120 110 100 90 80 70 60 50
IC = 3 A
PD%
Normalised Power Derating
with heatsink compound
1.1
1
0.9
40 30 20 10 0 0 20 40 60 80 Ths / C 100 120 140
0.8
0.7
0.6
0
1
2
3
IB / A
4
Fig.9. Typical base-emitter saturation voltage.
Fig.11. Normalised power dissipation. PD% = 100PD/PD 25C
10
ts/tf/ us ICsat = 3 A Ths = 85 C Freq = 16 kHz
Zth (K/W)
BU4506DF/DX
10
D = 0.5
8
1
6
0.2
0.1 0.05
0.1
4
0.02 D=0
P D
tp
D = tp/T
0.01
2
T
0
t
0
0.5
1
1.5
IB / A
2
0.001 1E-06
1E-05
1E-04
1E-03 1E-02 t/s
1E-01 1E+00 1E+01
Fig.10. Typical collector storage and fall time. IC =3 A; Tj = 85C; f = 16kHz
Fig.12. Transient thermal impedance.
July 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AX
MECHANICAL DATA
Dimensions in mm Net Mass: 5.88 g
16.0 max 0.7 4.5 10.0 27 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 5.45 5.45 3.3
5.8 max 3.0
25
0.9 max 3.3
Fig.13. SOT399; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
July 1999
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AX
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
July 1999
6
Rev 1.000

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